STP4NK80Z
- Mfr.Part #
- STP4NK80Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3A TO220AB
- Stock
- 3
- In Stock :
- 3
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Resistance :
- 3.5Ohm
- Terminal Finish :
- Matte Tin (Sn) - annealed
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 3.5 Ω @ 1.5A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Length :
- 10.4mm
- Weight :
- 4.535924g
- Turn On Delay Time :
- 13 ns
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 575pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 22.5nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 80W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- Additional Feature :
- AVALANCHE RATED
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Series :
- SuperMESH™
- Continuous Drain Current (ID) :
- 3A
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Base Part Number :
- STP4N
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3.75V
- Voltage - Rated DC :
- 800V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 35 ns
- Power Dissipation :
- 80W
- Drain Current-Max (Abs) (ID) :
- 3A
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 32 ns
- Height :
- 9.15mm
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Rise Time :
- 12ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 800V
- Datasheets
- STP4NK80Z

N-Channel Tube 3.5 Ω @ 1.5A, 10V ±30V 575pF @ 25V 22.5nC @ 10V TO-220-3
STP4NK80Z Description
STP4NK80Z is an 800v Zener-Protected SuperMESH? MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST's full range of high voltage MOSFETs including revolutionary MDmesh? products.
STP4NK80Z Features
-
Extremely high dv/dt capability
-
100% avalanche tested
-
Gate charge minimized
-
Very low intrinsic capacitances
-
Very good manufacturing repeatability
STP4NK80Z Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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