STP4NK60ZFP
- Mfr.Part #
- STP4NK60ZFP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4A TO220FP
- Stock
- 78,500
- In Stock :
- 78,500
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Gate to Source Voltage (Vgs) :
- 30V
- Drain Current-Max (Abs) (ID) :
- 4A
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 600V
- Threshold Voltage :
- 3.75V
- Package / Case :
- TO-220-3 Full Pack
- Dual Supply Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- Termination :
- Through Hole
- Series :
- SuperMESH™
- Resistance :
- 2Ohm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Height :
- 9.3mm
- Length :
- 10.4mm
- Mount :
- Through Hole
- Turn On Delay Time :
- 12 ns
- Base Part Number :
- STP4N
- JESD-609 Code :
- e3
- Power Dissipation :
- 25W
- Pin Count :
- 3
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Width :
- 4.6mm
- Continuous Drain Current (ID) :
- 4A
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 2A, 10V
- Power Dissipation-Max :
- 25W Tc
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 16.5 ns
- Number of Elements :
- 1
- Rise Time :
- 9.5ns
- Case Connection :
- Isolated
- Nominal Vgs :
- 3.75 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Turn-Off Delay Time :
- 29 ns
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- REACH SVHC :
- No SVHC
- Datasheets
- STP4NK60ZFP

N-Channel Tube 2 Ω @ 2A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-220-3 Full Pack
STP4NK60ZFP Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 510pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 29 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3.75V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STP4NK60ZFP Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V
STP4NK60ZFP Applications
There are a lot of STMicroelectronics
STP4NK60ZFP applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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