STP4NK50ZD
- Mfr.Part #
- STP4NK50ZD
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A TO220AB
- Stock
- 6,176
- In Stock :
- 6,176
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 45W
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STP4N
- Fall Time (Typ) :
- 22 ns
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Rise Time :
- 15.5ns
- Transistor Element Material :
- SILICON
- Width :
- 4.6mm
- Current Rating :
- 3A
- Power Dissipation-Max :
- 45W Tc
- Mount :
- Through Hole
- Length :
- 10.4mm
- Drain Current-Max (Abs) (ID) :
- 3A
- Continuous Drain Current (ID) :
- 3A
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 15.75mm
- Transistor Application :
- SWITCHING
- Series :
- SuperMESH™
- Turn On Delay Time :
- 9.5 ns
- Drain to Source Breakdown Voltage :
- 500V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 500V
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 23 ns
- Number of Elements :
- 1
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.5A, 10V
- Package / Case :
- TO-220-3
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Vgs (Max) :
- ±30V
- Datasheets
- STP4NK50ZD

N-Channel Tube 2.7 Ω @ 1.5A, 10V ±30V 310pF @ 25V 12nC @ 10V TO-220-3
STP4NK50ZD Overview
A device's maximum input capacitance is 310pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP4NK50ZD Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 23 ns
STP4NK50ZD Applications
There are a lot of STMicroelectronics
STP4NK50ZD applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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