STP4NK50Z
- Mfr.Part #
- STP4NK50Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3A TO220AB
- Stock
- 8,167
- In Stock :
- 8,167
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 500V
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 10V
- Power Dissipation :
- 45W
- Pin Count :
- 3
- Current Rating :
- 3A
- JEDEC-95 Code :
- TO-220AB
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 310pF @ 25V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Rise Time :
- 15.5ns
- Drain Current-Max (Abs) (ID) :
- 3A
- Fall Time (Typ) :
- 22 ns
- Continuous Drain Current (ID) :
- 3A
- Gate to Source Voltage (Vgs) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 23 ns
- Width :
- 4.6mm
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±30V
- Radiation Hardening :
- No
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 15.75mm
- Transistor Application :
- SWITCHING
- Length :
- 10.4mm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 45W Tc
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Series :
- SuperMESH™
- Turn On Delay Time :
- 9.5 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 2.7 Ω @ 1.5A, 10V
- Base Part Number :
- STP4N
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- STP4NK50Z

N-Channel Tube 2.7 Ω @ 1.5A, 10V ±30V 310pF @ 25V 12nC @ 10V TO-220-3
STP4NK50ZD Overview
A device's maximum input capacitance is 310pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 23 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP4NK50ZD Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 23 ns
STP4NK50ZD Applications
There are a lot of STMicroelectronics
STP4NK50ZD applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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