STP4NB80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Rise Time :

8ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

PowerMESH™

Pin Count :

3

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

800V

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Current Rating :

4A

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

4A

Base Part Number :

STP4N

Lead Free :

Contains Lead

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Mount :

Through Hole

Power Dissipation-Max :

100W Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

230 mJ

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Voltage - Rated DC :

800V

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

4A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Power Dissipation :

100W

Vgs (Max) :

±30V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2A, 10V

ECCN Code :

EAR99

Fall Time (Typ) :

9 ns