STP4NB50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mount :

Through Hole

Terminal Finish :

Tin/Lead (Sn/Pb)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Fall Time (Typ) :

5 ns

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Power Dissipation-Max :

80W Tc

Base Part Number :

STP4N

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

15.2A

Turn On Delay Time :

11 ns

Number of Elements :

1

Vgs (Max) :

±30V

Lead Free :

Contains Lead

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Single

FET Type :

N-Channel

Package / Case :

TO-220-3

JESD-609 Code :

e0

Packaging :

Tube

Avalanche Energy Rating (Eas) :

220 mJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

500V

Pin Count :

3

Power Dissipation :

80W

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Voltage - Rated DC :

500V

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 1.9A, 10V

Current Rating :

3.8A

Series :

PowerMESH™

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Rise Time :

8ns

Continuous Drain Current (ID) :

3.8A

ECCN Code :

EAR99