STP4NB100

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

1000V

Continuous Drain Current (ID) :

3.8A

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

12 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

3.8A Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Element Configuration :

Single

RoHS Status :

Non-RoHS Compliant

Series :

PowerMESH™

Voltage - Rated DC :

1kV

Power Dissipation-Max :

125W Tc

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation :

125W

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

9ns

Drain to Source Breakdown Voltage :

1kV

Rds On (Max) @ Id, Vgs :

4.4 Ω @ 2A, 10V

Number of Terminations :

3

Current Rating :

3.8A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Pin Count :

3

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Base Part Number :

STP4N

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±30V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

360 mJ

Package / Case :

TO-220-3