STP4N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 100V

Package / Case :

TO-220-3

Turn On Delay Time :

16.5 ns

Drain Current-Max (Abs) (ID) :

3A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Fall Time (Typ) :

21 ns

Length :

10.4mm

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Width :

4.6mm

Rise Time :

15ns

Packaging :

Tube

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

800V

Case Connection :

DRAIN

Mount :

Through Hole

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

74.5 mJ

Factory Lead Time :

17 Weeks

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 100µA

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STP4N

Number of Elements :

1

Continuous Drain Current (ID) :

3A

Height :

15.75mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 1.5A, 10V

Number of Terminations :

3

Power Dissipation-Max :

60W Tc

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Series :

SuperMESH5™

Power Dissipation :

60W

Vgs (Max) :

±30V

Resistance :

2.5Ohm

JEDEC-95 Code :

TO-220AB

Number of Channels :

1

Radiation Hardening :

No

Turn-Off Delay Time :

36 ns