STP4N62K3
- Mfr.Part #
- STP4N62K3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 620V 3.8A TO220
- Stock
- 7,542
- In Stock :
- 7,542
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Tc
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Pin Count :
- 3
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 1.95 Ω @ 1.9A, 10V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.4mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 29 ns
- Transistor Element Material :
- SILICON
- Width :
- 4.6mm
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 450pF @ 50V
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Threshold Voltage :
- 3.75V
- Power Dissipation :
- 70W
- Turn On Delay Time :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 19 ns
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 620V
- Rise Time :
- 9ns
- Series :
- SuperMESH3™
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 70W Tc
- Packaging :
- Tube
- Height :
- 15.75mm
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Resistance :
- 1.95Ohm
- Base Part Number :
- STP4N
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 3.8A
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Datasheets
- STP4N62K3

N-Channel Tube 1.95 Ω @ 1.9A, 10V ±30V 450pF @ 50V 14nC @ 10V TO-220-3
STP4N62K3 Overview
The maximum input capacitance of this device is 450pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 3.8A.When VGS=620V, and ID flows to VDS at 620VVDS, the drain-source breakdown voltage is 620V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 29 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.75V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.
STP4N62K3 Features
a continuous drain current (ID) of 3.8A
a drain-to-source breakdown voltage of 620V voltage
the turn-off delay time is 29 ns
a threshold voltage of 3.75V
STP4N62K3 Applications
There are a lot of STMicroelectronics
STP4N62K3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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