STP4N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Rise Time :

7ns

FET Type :

N-Channel

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Resistance :

2.6Ohm

Length :

10.4mm

Packaging :

Tube

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-220-3

Threshold Voltage :

3.75V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Height :

16.4mm

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Operating Temperature :

150°C TJ

Series :

SuperMESH3™

Width :

4.6mm

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Position :

Single

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Fall Time (Typ) :

14 ns

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 1.25A, 10V

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Contact Plating :

Tin

Number of Pins :

3

Drain to Source Breakdown Voltage :

525V

Base Part Number :

STP4N

Power Dissipation-Max :

45W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

334pF @ 100V

Turn-Off Delay Time :

21 ns

Number of Elements :

1

Turn On Delay Time :

8 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation :

20W

Mount :

Through Hole

Continuous Drain Current (ID) :

2.5A