STP4N150

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Contact Plating :

Tin

Rise Time :

30ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

7 Ω @ 2A, 10V

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

150°C

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Operating Temperature :

150°C TJ

Turn On Delay Time :

35 ns

Case Connection :

Isolated

Length :

10.4mm

Mounting Type :

Through Hole

Lead Free :

Lead Free

Series :

PowerMESH™

JEDEC-95 Code :

TO-220AB

Height :

19.68mm

Number of Channels :

1

Power Dissipation-Max :

160W Tc

Vgs (Max) :

±30V

Voltage - Rated DC :

1.5kV

Number of Pins :

3

Threshold Voltage :

4V

Resistance :

7Ohm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Pin Count :

3

Number of Terminations :

3

Radiation Hardening :

No

Base Part Number :

STP4N

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

4A

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4A

Transistor Element Material :

SILICON

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

1.5kV

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

45 ns

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

1500V

REACH SVHC :

No SVHC

Power Dissipation :

160W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

12 Weeks

Width :

4.6mm

Current Rating :

4A

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns