STP45NE06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

STripFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STP45N

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

JESD-609 Code :

e0

FET Type :

N-Channel

Mount :

Through Hole

Drain-source On Resistance-Max :

0.028Ohm

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain to Source Breakdown Voltage :

60V

Number of Terminations :

3

Vgs (Max) :

±20V

Rise Time :

100ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Fall Time (Typ) :

45 ns

Power Dissipation :

100W

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Radiation Hardening :

No

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

150 mJ

Rds On (Max) @ Id, Vgs :

28m Ω @ 22.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Packaging :

Tube

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

180A

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Power Dissipation-Max :

100W Tc

Package / Case :

TO-220-3

Operating Temperature :

175°C TJ

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

45A