STP45N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

208W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

35A

Pulsed Drain Current-Max (IDM) :

140A

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Turn On Delay Time :

79.5 ns

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Length :

10.4mm

ECCN Code :

EAR99

Factory Lead Time :

17 Weeks

Height :

15.75mm

Avalanche Energy Rating (Eas) :

810 mJ

Nominal Vgs :

4 V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

650V

Gate to Source Voltage (Vgs) :

25V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Base Part Number :

STP45N

Radiation Hardening :

No

Packaging :

Tube

Transistor Application :

SWITCHING

Width :

4.6mm

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

3375pF @ 100V

Series :

MDmesh™ V

Number of Pins :

3

Vgs (Max) :

±25V

FET Type :

N-Channel

JESD-609 Code :

e3

Resistance :

78mOhm

Turn-Off Delay Time :

79.5 ns

Rds On (Max) @ Id, Vgs :

78m Ω @ 19.5A, 10V

Number of Terminations :

3

Power Dissipation-Max :

210W Tc

Package / Case :

TO-220-3

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Terminal Finish :

Matte Tin (Sn)

REACH SVHC :

No SVHC

Element Configuration :

Single

Threshold Voltage :

4V

Additional Feature :

ULTRA LOW RESISTANCE