STN2NF10

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Mfr.Part #
STN2NF10
Manufacturer
STMicroelectronics
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 100V 2.4A SOT-223
Stock
5,957
In Stock :
5,957

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Lead Free :
Lead Free
Drain Current-Max (Abs) (ID) :
2A
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
3.3W Tc
Number of Elements :
1
Avalanche Energy Rating (Eas) :
300 mJ
Element Configuration :
Single
Mount :
Surface Mount
Pulsed Drain Current-Max (IDM) :
8A
Current - Continuous Drain (Id) @ 25°C :
2.4A Tc
Height :
1.8mm
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Number of Pins :
4
Terminal Finish :
Matte Tin (Sn) - annealed
Power Dissipation :
3.3W
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 25V
ECCN Code :
EAR99
Threshold Voltage :
4V
Base Part Number :
STN2N
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
4
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Voltage - Rated DC :
100V
Resistance :
260mOhm
Terminal Position :
Dual
Fall Time (Typ) :
3 ns
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
2A
Peak Reflow Temperature (Cel) :
260
Factory Lead Time :
12 Weeks
Drain to Source Breakdown Voltage :
100V
Terminal Form :
Gull wing
Drive Voltage (Max Rds On,Min Rds On) :
10V
Weight :
4.535924g
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Current Rating :
2A
Time@Peak Reflow Temperature-Max (s) :
30
Turn On Delay Time :
6 ns
Pin Count :
4
Length :
6.5mm
Rds On (Max) @ Id, Vgs :
260m Ω @ 1.2A, 10V
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Width :
3.5mm
FET Type :
N-Channel
Package / Case :
TO-261-4, TO-261AA
Rise Time :
10ns
Turn-Off Delay Time :
20 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Series :
STripFET™ II
Datasheets
STN2NF10
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STN2NF10 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Base Part Number:STN2N, Number of Terminations:4, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, STN2NF10 pinout, STN2NF10 datasheet PDF, STN2NF10 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STN2NF10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STN2NF10


N-Channel Tape & Reel (TR) 260m Ω @ 1.2A, 10V ±20V 280pF @ 25V 14nC @ 10V TO-261-4, TO-261AA

STN2NF10 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STN2NF10 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 8A.
a threshold voltage of 4V


STN2NF10 Applications


There are a lot of STMicroelectronics
STN2NF10 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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