STN2NF10
- Mfr.Part #
- STN2NF10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2.4A SOT-223
- Stock
- 5,957
- In Stock :
- 5,957
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Drain Current-Max (Abs) (ID) :
- 2A
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 3.3W Tc
- Number of Elements :
- 1
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 8A
- Current - Continuous Drain (Id) @ 25°C :
- 2.4A Tc
- Height :
- 1.8mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Number of Pins :
- 4
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Power Dissipation :
- 3.3W
- Input Capacitance (Ciss) (Max) @ Vds :
- 280pF @ 25V
- ECCN Code :
- EAR99
- Threshold Voltage :
- 4V
- Base Part Number :
- STN2N
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Terminations :
- 4
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 100V
- Resistance :
- 260mOhm
- Terminal Position :
- Dual
- Fall Time (Typ) :
- 3 ns
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Weight :
- 4.535924g
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Current Rating :
- 2A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn On Delay Time :
- 6 ns
- Pin Count :
- 4
- Length :
- 6.5mm
- Rds On (Max) @ Id, Vgs :
- 260m Ω @ 1.2A, 10V
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Width :
- 3.5mm
- FET Type :
- N-Channel
- Package / Case :
- TO-261-4, TO-261AA
- Rise Time :
- 10ns
- Turn-Off Delay Time :
- 20 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Series :
- STripFET™ II
- Datasheets
- STN2NF10

N-Channel Tape & Reel (TR) 260m Ω @ 1.2A, 10V ±20V 280pF @ 25V 14nC @ 10V TO-261-4, TO-261AA
STN2NF10 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 280pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
STN2NF10 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 8A.
a threshold voltage of 4V
STN2NF10 Applications
There are a lot of STMicroelectronics
STN2NF10 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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