STN2NE10

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

4

Power Dissipation-Max :

2.5W Tc

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

2A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Series :

STripFET™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

17ns

Current Rating :

2A

Avalanche Energy Rating (Eas) :

20 mJ

Input Capacitance (Ciss) (Max) @ Vds :

305pF @ 25V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

150°C TJ

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

4

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Base Part Number :

STN2N

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

8A

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Voltage - Rated DC :

100V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

7 ns

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

25 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power Dissipation :

2.5W

Drain Current-Max (Abs) (ID) :

2A