STN2NE10L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

100V

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STN2N

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-261-4, TO-261AA

Number of Terminations :

4

Continuous Drain Current (ID) :

1.8A

Series :

STripFET™

ECCN Code :

EAR99

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current Rating :

1.8A

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

20 mJ

JESD-609 Code :

e3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Rds On (Max) @ Id, Vgs :

400m Ω @ 1A, 10V

Power Dissipation-Max :

2.5W Tc

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V

Rise Time :

17ns

Drain-source On Resistance-Max :

0.45Ohm

Pin Count :

4

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Operating Temperature :

150°C TJ

Vgs (Max) :

±20V

Turn-Off Delay Time :

22 ns

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Fall Time (Typ) :

8 ns

Pulsed Drain Current-Max (IDM) :

7.2A

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

1.8A Tc

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

2A

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.5W