STL7NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

14

Resistance :

900mOhm

Gate to Source Voltage (Vgs) :

25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

12 ns

Mount :

Surface Mount

Terminal Position :

QUAD

Pbfree Code :

yes

Number of Terminations :

5

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

26 ns

Pulsed Drain Current-Max (IDM) :

5.6A

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Base Part Number :

STL7

Number of Elements :

1

Series :

MDmesh™ II

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Power Dissipation :

4W

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Rise Time :

10ns

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

363pF @ 50V

Power Dissipation-Max :

68W Tc

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.5A, 10V

Drain to Source Breakdown Voltage :

600V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5.8A

Turn On Delay Time :

7 ns

Package / Case :

14-PowerVQFN

Pin Count :

14

JESD-30 Code :

S-PQCC-N5

ECCN Code :

EAR99

Case Connection :

DRAIN

Lead Free :

Lead Free