STL7DN6LF3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Feature :

Logic Level Gate

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

8.8nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

JESD-609 Code :

e3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Number of Pins :

8

Series :

Automotive, AEC-Q101, STripFET™ III

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Number of Terminations :

6

Pulsed Drain Current-Max (IDM) :

26A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Max Power Dissipation :

52W

Continuous Drain Current (ID) :

20A

Terminal Form :

Flat

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PDSO-F6

Avalanche Energy Rating (Eas) :

190 mJ

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

432pF @ 25V

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerVDFN

Power Dissipation :

52W

Drain-source On Resistance-Max :

0.06Ohm

Base Part Number :

STL7D

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Case Connection :

DRAIN

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

43m Ω @ 3A, 10V

Radiation Hardening :

No

Number of Elements :

2