STL70N10F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

136W

Number of Pins :

8

Radiation Hardening :

No

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

5.7 ns

Terminal Form :

Flat

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3210pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerVDFN

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 8A, 10V

Power Dissipation-Max :

136W Tc

Operating Temperature :

-55°C~175°C TJ

Series :

STripFET™ III

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

17 ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

43 ns

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Continuous Drain Current (ID) :

82A

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Base Part Number :

STL70

Terminal Position :

Dual

Rise Time :

11ns

Avalanche Energy Rating (Eas) :

770 mJ

Pulsed Drain Current-Max (IDM) :

64A

Number of Terminations :

5