STL100N1VH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

500mV

Series :

STripFET™ V

Additional Feature :

ULTRA-LOW RESISTANCE

Resistance :

3mOhm

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

26.5nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Rise Time :

31.6ns

Length :

5.2mm

Base Part Number :

STL100

Radiation Hardening :

No

Turn-Off Delay Time :

50 ns

Input Capacitance (Ciss) (Max) @ Vds :

2085pF @ 10V

Avalanche Energy Rating (Eas) :

300 mJ

Continuous Drain Current (ID) :

100A

Height :

950μm

Power Dissipation-Max :

60W Tc

Number of Terminations :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

3m Ω @ 12.5A, 4.5V

Width :

6.15mm

Mounting Type :

Surface Mount

Turn On Delay Time :

14.4 ns

Pin Count :

8

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Element Configuration :

Single

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

500mV @ 250μA (Min)

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Power Dissipation :

60W

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

12V

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

5

Number of Elements :

1

Vgs (Max) :

±8V

Fall Time (Typ) :

16 ns

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100A Tc