STGY50NC60WD

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Single

Test Condition :

390V, 40A, 10 Ω, 15V

Termination :

Through Hole

Element Configuration :

Single

Collector Emitter Saturation Voltage :

2.5V

Current - Collector Pulsed (Icm) :

180A

Height :

20.3mm

Length :

15.9mm

Reverse Recovery Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 40A

Gate Charge :

195nC

Mounting Type :

Through Hole

Lead Free :

Lead Free

Base Part Number :

STGY50

Turn On Delay Time :

52 ns

Pin Count :

3

Gate-Emitter Thr Voltage-Max :

5.75V

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

Transistor Application :

POWER CONTROL

Transistor Element Material :

SILICON

Switching Energy :

365μJ (on), 560μJ (off)

Max Power Dissipation :

278W

JESD-30 Code :

R-PSFM-T3

Max Collector Current :

110A

Rise Time :

17ns

Turn On Time :

69 ns

REACH SVHC :

No SVHC

Td (on/off) @ 25°C :

52ns/240ns

Gate-Emitter Voltage-Max :

20V

Power - Max :

278W

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

247

Number of Elements :

1

Series :

PowerMESH™

Collector Emitter Voltage (VCEO) :

600V

Turn Off Time-Nom (toff) :

271 ns

Number of Terminations :

3

Width :

5.3mm

Turn-Off Delay Time :

240 ns

Polarity/Channel Type :

N-Channel

Power Dissipation :

260W

Package / Case :

TO-247-3

Input Type :

Standard

Mount :

Through Hole

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

ECCN Code :

EAR99