STGE200NB60S

Manufacturer :

STMicroelectronics

Product Category :

Transistors - IGBTs - Modules

NTC Thermistor :

No

RoHS Status :

ROHS3 Compliant

Input :

Standard

Lead Free :

Lead Free

Terminal Form :

UNSPECIFIED

Number of Pins :

4

Turn On Time :

170 ns

Operating Temperature :

-55°C~150°C TJ

VCEsat-Max :

1.6 V

REACH SVHC :

No SVHC

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

600W

Package / Case :

SOT-227-4, miniBLOC

Collector Emitter Voltage (VCEO) :

600V

Mounting Type :

Chassis Mount

Weight :

28.349523g

Mount :

Chassis Mount, Panel, Screw

Input Capacitance :

1.56nF

Collector Emitter Saturation Voltage :

1.2V

Vce(on) (Max) @ Vge, Ic :

1.6V @ 15V, 100A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Max Collector Current :

200A

Gate-Emitter Voltage-Max :

20V

Turn Off Time-Nom (toff) :

4600 ns

ECCN Code :

EAR99

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

200A

Length :

38.2mm

Current - Collector Cutoff (Max) :

500μA

Configuration :

Single

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Cies) @ Vce :

1.56nF @ 25V

Voltage - Rated DC :

600V

Height :

9.1mm

Transistor Application :

POWER CONTROL

Base Part Number :

STGE200

Series :

PowerMESH™

Number of Terminations :

4

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Rise Time :

112ns

Case Connection :

Isolated

Pin Count :

4

Power Dissipation :

600W

Terminal Finish :

Nickel (Ni)

Width :

25.5mm

Current Rating :

150A

Turn-Off Delay Time :

2.4 μs

Factory Lead Time :

8 Weeks

Turn On Delay Time :

64 ns

Number of Elements :

1