STF7NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Number of Pins :

3

ECCN Code :

EAR99

Fall Time (Typ) :

10 ns

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

620pF @ 25V

Length :

10.4mm

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

26A

Width :

4.6mm

Rds On (Max) @ Id, Vgs :

1.05 Ω @ 3.25A, 10V

Number of Terminations :

3

Height :

16.4mm

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

4 V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

STF7N

Continuous Drain Current (ID) :

6.5A

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Power Dissipation-Max :

25W Tc

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn) - annealed

JESD-609 Code :

e3

Turn On Delay Time :

20 ns

Mounting Type :

Through Hole

Number of Elements :

1

Avalanche Energy Rating (Eas) :

240 mJ

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Package / Case :

TO-220-3 Full Pack

REACH SVHC :

No SVHC

Series :

MDmesh™

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rise Time :

8ns

Turn-Off Delay Time :

35 ns

Element Configuration :

Single

Power Dissipation :

25W

Factory Lead Time :

16 Weeks