STF7N65M2
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- Mfr.Part #
- STF7N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 5A TO220FP
- Stock
- 17,315
- In Stock ：
- 17,315
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Resistance :
- 980mOhm
- Drain to Source Breakdown Voltage :
- 650V
- Vgs (Max) :
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds :
- 270pF @ 100V
- Gate to Source Voltage (Vgs) :
- 25V
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 10V
- Power Dissipation-Max :
- 20W Tc
- Fall Time (Typ) :
- 20 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 1.15 Ω @ 2.5A, 10V
- Continuous Drain Current (ID) :
- 5A
- Rise Time :
- 20ns
- ECCN Code :
- EAR99
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 16 Weeks
- Base Part Number :
- STF7N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 329.988449mg
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- MDmesh™
- Turn-Off Delay Time :
- 30 ns
- Current - Continuous Drain (Id) @ 25°C :
- 5A Tc
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 8 ns
- Package / Case :
- TO-220-3 Full Pack
- Datasheets
- STF7N65M2
N-Channel Tube 1.15 Ω @ 2.5A, 10V ±25V 270pF @ 100V 9nC @ 10V TO-220-3 Full Pack
STF7N65M2 Overview
A device's maximal input capacitance is 270pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 30 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.This device reduces its overall power consumption by using drive voltage (10V).
STF7N65M2 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 30 ns
STF7N65M2 Applications
There are a lot of STMicroelectronics
STF7N65M2 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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