STF7N95K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

7.2A

Power Dissipation :

35W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

12 Weeks

Rise Time :

9ns

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Base Part Number :

STF7N

Fall Time (Typ) :

23 ns

Current - Continuous Drain (Id) @ 25°C :

7.2A Tc

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 100µA

Transistor Application :

SWITCHING

Mount :

Through Hole

Radiation Hardening :

No

Mounting Type :

Through Hole

Height :

16.4mm

Drain to Source Breakdown Voltage :

950V

Turn On Delay Time :

14 ns

Turn-Off Delay Time :

36 ns

Input Capacitance (Ciss) (Max) @ Vds :

1031pF @ 100V

Power Dissipation-Max :

35W Tc

Length :

10.4mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.6mm

Terminal Finish :

Matte Tin (Sn) - annealed

Pulsed Drain Current-Max (IDM) :

28.8A

Series :

SuperMESH3™

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Element Configuration :

Single

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.35 Ω @ 3.6A, 10V

Case Connection :

Isolated

Packaging :

Tube

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

220 mJ