STF19NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

15.5A

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

400 mJ

Rise Time :

8ns

Fall Time (Typ) :

26 ns

Base Part Number :

STF19

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

15.5A Tc

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II

Number of Elements :

1

Qualification Status :

Not Qualified

Element Configuration :

Single

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

35W

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Packaging :

Tube

Turn-Off Delay Time :

80 ns

Case Connection :

Isolated

Resistance :

250mOhm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

650V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

270m Ω @ 7.75A, 10V

Power Dissipation-Max :

35W Tc

Vgs (Max) :

±25V

FET Type :

N-Channel

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 50V

Reach Compliance Code :

not_compliant

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

62A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - annealed