STF18NM60ND
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- Mfr.Part #
- STF18NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A TO220FP
- Stock
- 10,637
- In Stock ：
- 10,637
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 55 ns
- Drain-source On Resistance-Max :
- 0.29Ohm
- Rds On (Max) @ Id, Vgs :
- 290m Ω @ 6.5A, 10V
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 13A
- Power Dissipation-Max :
- 30W Tc
- Length :
- 10.6mm
- Turn-Off Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Rise Time :
- 15.5ns
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 187 mJ
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Fall Time (Typ) :
- 18 ns
- Number of Pins :
- 3
- Width :
- 4.6mm
- Base Part Number :
- STF18
- FET Type :
- N-Channel
- Vgs (Max) :
- ±25V
- Operating Temperature :
- 150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Drain to Source Breakdown Voltage :
- 650V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 25V
- Pulsed Drain Current-Max (IDM) :
- 52A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1030pF @ 50V
- Series :
- FDmesh™ II
- Drain to Source Voltage (Vdss) :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Height :
- 16.4mm
- Datasheets
- STF18NM60ND
N-Channel Tube 290m Ω @ 6.5A, 10V ±25V 1030pF @ 50V 34nC @ 10V 600V TO-220-3 Full Pack
STF18NM60ND Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 187 mJ.The maximum input capacitance of this device is 1030pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 13A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 13 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 52A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 55 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
STF18NM60ND Features
the avalanche energy rating (Eas) is 187 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 13 ns
based on its rated peak drain current 52A.
a 600V drain to source voltage (Vdss)
STF18NM60ND Applications
There are a lot of STMicroelectronics
STF18NM60ND applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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