STF18N65M5
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- Mfr.Part #
- STF18N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 15A TO220FP
- Stock
- 121
- In Stock ：
- 121
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1240pF @ 100V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 15A Tc
- Case Connection :
- Isolated
- Base Part Number :
- STF18
- Resistance :
- 220mOhm
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Pins :
- 3
- Turn-Off Delay Time :
- 36 ns
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Height :
- 16.4mm
- Series :
- MDmesh™ V
- Rds On (Max) @ Id, Vgs :
- 220m Ω @ 7.5A, 10V
- Turn On Delay Time :
- 36 ns
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 4.6mm
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Drain to Source Breakdown Voltage :
- 650V
- Power Dissipation :
- 25W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Continuous Drain Current (ID) :
- 15A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 25W Tc
- Radiation Hardening :
- No
- Datasheets
- STF18N65M5
N-Channel Tube 220m Ω @ 7.5A, 10V ±25V 1240pF @ 100V 31nC @ 10V TO-220-3 Full Pack
STF18N65M5 Overview
The maximum input capacitance of this device is 1240pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 15A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 36 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 60A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STF18N65M5 Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 36 ns
based on its rated peak drain current 60A.
STF18N65M5 Applications
There are a lot of STMicroelectronics
STF18N65M5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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