STF18N55M5
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- Mfr.Part #
- STF18N55M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 16A TO220FP
- Stock
- 7,112
- In Stock ：
- 7,112
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 13A
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 13 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 25W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Resistance :
- 240mOhm
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 550V
- Mount :
- Through Hole
- Case Connection :
- Isolated
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3 Full Pack
- Base Part Number :
- STF18
- Length :
- 10.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 100V
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Avalanche Energy Rating (Eas) :
- 200 mJ
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 52A
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Series :
- MDmesh™ V
- Rise Time :
- 9.5ns
- Gate to Source Voltage (Vgs) :
- 25V
- Pin Count :
- 3
- Threshold Voltage :
- 4V
- Height :
- 16.4mm
- Mounting Type :
- Through Hole
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 29 ns
- Transistor Application :
- SWITCHING
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Rds On (Max) @ Id, Vgs :
- 192m Ω @ 8A, 10V
- Operating Temperature :
- 150°C TJ
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Terminations :
- 3
- Power Dissipation :
- 25W
- Packaging :
- Tube
- Datasheets
- STF18N55M5
N-Channel Tube 192m Ω @ 8A, 10V ±25V 1260pF @ 100V 31nC @ 10V TO-220-3 Full Pack
STF18N55M5 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 1260pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 550V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 52A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
STF18N55M5 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 29 ns
based on its rated peak drain current 52A.
a threshold voltage of 4V
STF18N55M5 Applications
There are a lot of STMicroelectronics
STF18N55M5 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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