STF17N80K5
- Mfr.Part #
- STF17N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO220FP
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 30W Tc
- Drain to Source Voltage (Vdss) :
- 800V
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 7A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 866pF @ 100V
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Factory Lead Time :
- 17 Weeks
- Base Part Number :
- STF17
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- MDmesh™ K5
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Datasheets
- STF17N80K5

N-Channel Tube 340m Ω @ 7A, 10V ±30V 866pF @ 100V 26nC @ 10V 800V TO-220-3 Full Pack
STF17N80K5 Description
Using cutting-edge proprietary vertical structure technology, MDmeshTM K5 technology was used to build this extremely high voltage N-channel Power MOSFET. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
STF17N80K5 Features
-
Lowest RDS(on) x area in the industry
-
The highest merit figure in the sector (FoM)
-
Very little gate charge
-
Avalanche tested and Zener-protected 100 percent
STF17N80K5 Applications
Switching applications
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