STF16N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

4V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

48A

Width :

4.6mm

Power Dissipation :

25W

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±25V

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 100V

Avalanche Energy Rating (Eas) :

200 mJ

Additional Feature :

ULTRA-LOW RESISTANCE

Rise Time :

9ns

Case Connection :

Isolated

Base Part Number :

STF16

Continuous Drain Current (ID) :

12A

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Factory Lead Time :

17 Weeks

Series :

MDmesh™ V

Vgs(th) (Max) @ Id :

5V @ 250μA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Rds On (Max) @ Id, Vgs :

299m Ω @ 6A, 10V

Operating Temperature :

150°C TJ

Turn-Off Delay Time :

30 ns

Package / Case :

TO-220-3 Full Pack

Number of Pins :

3

Fall Time (Typ) :

7 ns

Turn On Delay Time :

25 ns

Mounting Type :

Through Hole

Lead Free :

Lead Free

FET Type :

N-Channel

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Transistor Application :

SWITCHING

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Power Dissipation-Max :

25W Tc

Terminal Finish :

Matte Tin (Sn) - annealed

RoHS Status :

ROHS3 Compliant

Resistance :

279mOhm

Radiation Hardening :

No

Packaging :

Tube

REACH SVHC :

No SVHC

Number of Elements :

1

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Height :

9.3mm

Length :

10.4mm