STF16N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

Package / Case :

TO-220-3 Full Pack

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

19.5nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.5A, 10V

Series :

MDmesh™ M2

Continuous Drain Current (ID) :

11A

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pulsed Drain Current-Max (IDM) :

44A

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

360 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Base Part Number :

STF16

Case Connection :

Isolated

Number of Elements :

1

Packaging :

Tube

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

650V

Drain-source On Resistance-Max :

0.36ohm

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

718pF @ 100V

Number of Terminations :

3

Power Dissipation-Max :

25W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V