STF15NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

14A

Operating Temperature :

-55°C~150°C TJ

Length :

10.4mm

Packaging :

Tube

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Base Part Number :

STF15

Drain to Source Breakdown Voltage :

600V

Number of Elements :

1

Width :

4.6mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Rise Time :

20ns

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Terminal Finish :

Matte Tin (Sn) - annealed

Mounting Type :

Through Hole

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

Transistor Application :

SWITCHING

Vgs (Max) :

±25V

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Series :

FDmesh™ II

Fall Time (Typ) :

28 ns

Pulsed Drain Current-Max (IDM) :

56A

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Turn On Delay Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Power Dissipation :

30W

Case Connection :

Isolated

Height :

16.4mm

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

47 ns

Number of Pins :

3

Power Dissipation-Max :

30W Tc

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain-source On Resistance-Max :

0.299Ohm