STF15NM60N
- Mfr.Part #
- STF15NM60N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220FP
- Stock
- 7,976
- In Stock :
- 7,976
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 30 ns
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation-Max :
- 30W Tc
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 80 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Through Hole
- Vgs (Max) :
- ±25V
- Power Dissipation :
- 30W
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Rise Time :
- 14ns
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 14A
- Base Part Number :
- STF15
- Gate to Source Voltage (Vgs) :
- 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Series :
- MDmesh™ II
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 600V
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- FET Type :
- N-Channel
- Resistance :
- 270mOhm
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 56A
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Number of Terminations :
- 3
- Datasheets
- STF15NM60N

N-Channel Tube 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 37nC @ 10V TO-220-3 Full Pack
STF15NM60N Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1250pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 80 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF15NM60N Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 56A.
STF15NM60N Applications
There are a lot of STMicroelectronics
STF15NM60N applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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