STF15N80K5
- Mfr.Part #
- STF15N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 14A TO220FP
- Stock
- 645
- In Stock :
- 645
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 800V
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Length :
- 10.4mm
- Height :
- 16.4mm
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 375m Ω @ 7A, 10V
- Power Dissipation-Max :
- 35W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 10 ns
- Factory Lead Time :
- 17 Weeks
- Turn-Off Delay Time :
- 44 ns
- Number of Terminations :
- 3
- Continuous Drain Current (ID) :
- 14A
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- FET Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 19 ns
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Transistor Application :
- SWITCHING
- Series :
- SuperMESH5™
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 35W
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Base Part Number :
- STF15
- Pulsed Drain Current-Max (IDM) :
- 56A
- Rise Time :
- 17.6ns
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Package / Case :
- TO-220-3 Full Pack
- Width :
- 4.6mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Datasheets
- STF15N80K5

N-Channel Tube 375m Ω @ 7A, 10V ±30V 1100pF @ 100V 32nC @ 10V TO-220-3 Full Pack
Description
The STF15N80K5 is an N-channel 800 V, 0.3 Ω typ., 14 A MDmesh? K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages. These N-channel Power MOSFETs with a very high voltage were created using MDmeshTM K5 technology and a cutting-edge, custom vertical structure. As a result, on-resistance is drastically reduced, and ultra-low gate charges are produced for applications demanding a high level of efficiency and higher power density.
Features
-
Ultra-low gate charge
-
100% avalanche tested
-
Zener-protected
-
Industry's lowest RDS(on) x area
-
Industry's best figure of merit (FOM)
Applications
-
Switching applications
-
Uninterruptible Power Supplies (UPS)
-
Small motor control
-
Switch Mode Power Supplies (SMPS)
-
Power-Over-Ethernet (PoE)
-
Solar inverters
-
Automotive applications
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