STF14NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Pulsed Drain Current-Max (IDM) :

48A

Mount :

Through Hole

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Pin Count :

3

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

RoHS Status :

ROHS3 Compliant

Case Connection :

Isolated

Rise Time :

13ns

Fall Time (Typ) :

20 ns

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Series :

MDmesh™ II

Base Part Number :

STF14

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

Drain to Source Breakdown Voltage :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

30W Tc

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Continuous Drain Current (ID) :

12A

Terminal Finish :

Matte Tin (Sn) - annealed

Packaging :

Tube

Operating Temperature :

150°C TJ

Power Dissipation :

30W

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

Not Applicable

Turn-Off Delay Time :

55 ns