STF14NM50N
- Mfr.Part #
- STF14NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO220FP
- Stock
- 7,297
- In Stock :
- 7,297
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 16ns
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Power Dissipation :
- 25W
- Input Capacitance (Ciss) (Max) @ Vds :
- 816pF @ 50V
- JEDEC-95 Code :
- TO-220AB
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Turn-Off Delay Time :
- 42 ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Number of Elements :
- 1
- Power Dissipation-Max :
- 25W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 500V
- Turn On Delay Time :
- 10.2 ns
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Factory Lead Time :
- 16 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Threshold Voltage :
- 3V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Fall Time (Typ) :
- 22 ns
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 6A, 10V
- Continuous Drain Current (ID) :
- 12A
- Pulsed Drain Current-Max (IDM) :
- 48A
- Series :
- MDmesh™ II
- Mount :
- Through Hole
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs (Max) :
- ±25V
- Length :
- 10.4mm
- Packaging :
- Tube
- Width :
- 4.6mm
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Pins :
- 3
- Resistance :
- 320mOhm
- Height :
- 16.4mm
- Case Connection :
- Isolated
- Base Part Number :
- STF14
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Datasheets
- STF14NM50N

N-Channel Tube 320m Ω @ 6A, 10V ±25V 816pF @ 50V 27nC @ 10V TO-220-3 Full Pack
STF14NM50N Description
IGBT uses on Semiconductor's planar technology and is ideal for many high-frequency and high-voltage switching applications, in which low conduction loss is critical. The device has been optimized for intermediate frequency switching mode power supply.
STF14NM50N Features
? 100% avalanche tested
? Low input capacitance and gate charge
? Low gate input resistance
STF14NM50N Applications
? Switching applications
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