STF13NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

4.6mm

Gate Charge (Qg) (Max) @ Vgs :

24.5nC @ 10V

Continuous Drain Current (ID) :

11A

Mount :

Through Hole

Transistor Application :

SWITCHING

Element Configuration :

Single

Vgs (Max) :

±25V

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

25V

Height :

16.4mm

Turn-Off Delay Time :

9.6 ns

Series :

FDmesh™ II

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

25W Tc

Factory Lead Time :

16 Weeks

Turn On Delay Time :

46.5 ns

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

845pF @ 50V

Power Dissipation :

25W

Operating Temperature :

150°C TJ

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Number of Pins :

3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

44A

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15.4 ns

Length :

10.6mm

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

650V

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STF13

Rise Time :

10ns