STF13NM60N-H

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.5A, 10V

Turn On Delay Time :

3 ns

Operating Temperature :

150°C TJ

Series :

MDmesh™ II

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Pulsed Drain Current-Max (IDM) :

44A

Rise Time :

8ns

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 50V

JESD-609 Code :

e3

Terminal Position :

Single

Power Dissipation-Max :

25W Tc

Number of Elements :

1

Fall Time (Typ) :

10 ns

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

200 mJ

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Packaging :

Tube

FET Type :

N-Channel

Turn-Off Delay Time :

30 ns

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Number of Pins :

3

Vgs (Max) :

±25V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Number of Terminations :

3

Radiation Hardening :

No

DS Breakdown Voltage-Min :

600V

Continuous Drain Current (ID) :

11A

Base Part Number :

STF13

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant