STF13NM50N
- Mfr.Part #
- STF13NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 12A TO220FP
- Stock
- 5,609
- In Stock :
- 5,609
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 25V
- Package / Case :
- TO-220-3 Full Pack
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 6A
- Turn-Off Delay Time :
- 40 ns
- Rds On (Max) @ Id, Vgs :
- 320m Ω @ 6A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 500V
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 25W Tc
- Series :
- MDmesh™ II
- Rise Time :
- 15ns
- Fall Time (Typ) :
- 10 ns
- Power Dissipation :
- 25W
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Pulsed Drain Current-Max (IDM) :
- 48A
- Input Capacitance (Ciss) (Max) @ Vds :
- 960pF @ 50V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Case Connection :
- Isolated
- Vgs (Max) :
- ±25V
- Base Part Number :
- STF13
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Drain Current-Max (Abs) (ID) :
- 12A
- Reach Compliance Code :
- not_compliant
- Datasheets
- STF13NM50N

N-Channel Tube 320m Ω @ 6A, 10V ±25V 960pF @ 50V 30nC @ 10V TO-220-3 Full Pack
STF13NM50N Description
STF13NM50N is a 500v MDmesh? II Power MOSFET. This product is realized with the second generation of MDmesh? technology. This revolutionary Power MOSFET STF13NM50N associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charges. It is, therefore, suitable for the most demanding high-efficiency converters.
STF13NM50N Features
-
100% avalanche tested
-
Low input capacitance and gate charge
-
Low gate input resistance
-
Drain-source voltage (VGS=0):500V
-
Total dissipation at TC = 25 °C: 100W
STF13NM50N Applications
-
Rotary Switch
-
DIP Switch
-
Limit Switch
-
Reed Switch
-
Rocker Switch
-
Toggle Switch
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