STF13N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

430m Ω @ 5A, 10V

Number of Pins :

3

Case Connection :

Isolated

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Factory Lead Time :

16 Weeks

FET Type :

N-Channel

Number of Elements :

1

Height :

16.4mm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Base Part Number :

STF13

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Mount :

Through Hole

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.6mm

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Turn-Off Delay Time :

38 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Turn On Delay Time :

11 ns

Drain to Source Voltage (Vdss) :

650V

Package / Case :

TO-220-3 Full Pack

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

10A

Power Dissipation-Max :

25W Tc

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™ M2

Length :

10.4mm

Vgs (Max) :

±25V