STF13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

11A

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Turn On Delay Time :

11 ns

Drain to Source Voltage (Vdss) :

600V

Power Dissipation-Max :

25W Tc

Number of Elements :

1

Turn-Off Delay Time :

41 ns

Height :

16.4mm

Vgs (Max) :

±25V

Fall Time (Typ) :

9.5 ns

Drain to Source Breakdown Voltage :

650V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Mount :

Through Hole

FET Type :

N-Channel

Power Dissipation :

25W

Base Part Number :

STF13

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Width :

4.6mm

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Rise Time :

10ns

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Series :

MDmesh™ II Plus

Drive Voltage (Max Rds On,Min Rds On) :

10V