STF130N10F3
- Mfr.Part #
- STF130N10F3
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 46A TO220FP
- Stock
- 3,747
- In Stock :
- 3,747
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 7.2 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 46A Tc
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs :
- 57nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 46A
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Power Dissipation-Max :
- 35W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 3305pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 184A
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 38ns
- Resistance :
- 9.6mOhm
- Additional Feature :
- ULTRA LOW RESISTANCE
- Turn On Delay Time :
- 17 ns
- Terminal Position :
- Single
- Base Part Number :
- STF13
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 35W
- Turn-Off Delay Time :
- 52 ns
- Drain to Source Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Mount :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 9.6m Ω @ 23A, 10V
- Series :
- STripFET™ III
- Package / Case :
- TO-220-3 Full Pack
- Avalanche Energy Rating (Eas) :
- 125 mJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Datasheets
- STF130N10F3

N-Channel Tube 9.6m Ω @ 23A, 10V ±20V 3305pF @ 25V 57nC @ 10V TO-220-3 Full Pack
STF130N10F3 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 125 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3305pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 46A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 52 ns.Peak drain current for this device is 184A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STF130N10F3 Features
the avalanche energy rating (Eas) is 125 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 184A.
STF130N10F3 Applications
There are a lot of STMicroelectronics
STF130N10F3 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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