STF12NM50ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Mounting Type :

Through Hole

Terminal Position :

Single

Package / Case :

TO-220-3 Full Pack

Base Part Number :

STF12

Vgs (Max) :

±25V

Terminal Finish :

Matte Tin (Sn) - annealed

Transistor Application :

SWITCHING

Radiation Hardening :

No

Series :

FDmesh™ II

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Mount :

Through Hole

Number of Terminations :

3

Operating Temperature :

150°C TJ

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

25W Tc

Power Dissipation :

25W

Turn On Delay Time :

12 ns

DS Breakdown Voltage-Min :

500V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

17 ns

Pulsed Drain Current-Max (IDM) :

44A

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Packaging :

Tube

Configuration :

Single

Drain to Source Voltage (Vdss) :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

40 ns

Case Connection :

Isolated

Number of Pins :

3

Number of Elements :

1

Rise Time :

15ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Continuous Drain Current (ID) :

11A

Transistor Element Material :

SILICON