STF12NM50N
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- Mfr.Part #
- STF12NM50N
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A TO220FP
- Stock
- 4,484
- In Stock ：
- 4,484
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±25V
- Turn-Off Delay Time :
- 60 ns
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 500V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 44A
- Case Connection :
- Isolated
- Drain to Source Breakdown Voltage :
- 500V
- Gate to Source Voltage (Vgs) :
- 25V
- Reach Compliance Code :
- not_compliant
- Operating Temperature :
- 150°C TJ
- Power Dissipation-Max :
- 25W Tc
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Nominal Vgs :
- 3 V
- Pin Count :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 940pF @ 50V
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Base Part Number :
- STF12
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Fall Time (Typ) :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- Package / Case :
- TO-220-3 Full Pack
- Power Dissipation :
- 25W
- Series :
- MDmesh™ II
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Rise Time :
- 15ns
- Continuous Drain Current (ID) :
- 11A
- Element Configuration :
- Single
- Dual Supply Voltage :
- 500V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Current Rating :
- 11A
- Termination :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 380mOhm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- STF12NM50N
N-Channel Tube 380m Ω @ 5.5A, 10V ±25V 940pF @ 50V 30nC @ 10V TO-220-3 Full Pack
STF12NM50N Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 940pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 11A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=500V. And this device has 500V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 60 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 44A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STF12NM50N Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 44A.
STF12NM50N Applications
There are a lot of STMicroelectronics
STF12NM50N applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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