STF12NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Fall Time (Typ) :

31.5 ns

Dual Supply Voltage :

600V

Termination :

Through Hole

Case Connection :

Isolated

Number of Elements :

1

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

59nC @ 10V

Base Part Number :

STF12

Drain-source On Resistance-Max :

0.64Ohm

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Qualification Status :

Not Qualified

Current Rating :

10A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Number of Pins :

3

Transistor Element Material :

SILICON

Rise Time :

18.5ns

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

35W Tc

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

640m Ω @ 5A, 10V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Drain to Source Breakdown Voltage :

600V

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

Packaging :

Tube

Avalanche Energy Rating (Eas) :

260 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1740pF @ 25V

Series :

SuperMESH™

Nominal Vgs :

3.75 V

Voltage - Rated DC :

600V

FET Type :

N-Channel

Continuous Drain Current (ID) :

10A

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

40A

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Terminations :

3

Operating Temperature :

150°C TJ

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Power Dissipation :

35W

Turn-Off Delay Time :

55 ns