STF12N65M2
- Mfr.Part #
- STF12N65M2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8A TO220FP
- Stock
- 25,195
- In Stock :
- 25,195
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Series :
- MDmesh™ M2
- Number of Pins :
- 3
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 650V
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 34 ns
- FET Type :
- N-Channel
- Package / Case :
- TO-220-3 Full Pack
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Base Part Number :
- STF12
- Power Dissipation-Max :
- 25W Tc
- Turn On Delay Time :
- 9 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 25V
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.5Ohm
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 8A
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Height :
- 16.4mm
- Drain Current-Max (Abs) (ID) :
- 8A
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- ROHS3 Compliant
- Length :
- 10.4mm
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 16.5nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 4.6mm
- Drain to Source Voltage (Vdss) :
- 650V
- Vgs (Max) :
- ±25V
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 535pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 4A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STF12N65M2

N-Channel Tube 500m Ω @ 4A, 10V ±25V 535pF @ 100V 16.5nC @ 10V 650V TO-220-3 Full Pack
STF12N65M2 Description
The device is an N-channel power MOSFET developed by MDMesh twin M2 technology. Because of its strip layout and improved vertical structure, the device shows low on-resistance and optimized switching characteristics, making it suitable for the most demanding high-efficiency converters.
STF12N65M2 Features
· Extremely low gate charge
· Excellent output capacitance (COSS) profile
· 100% avalanche tested
· Zener-protected
STF12N65M2 Applications
· Switching applications
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