STF120NF10
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- Mfr.Part #
- STF120NF10
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 41A TO220FP
- Stock
- 711
- In Stock ：
- 711
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- Isolated
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Pbfree Code :
- yes
- Gate Charge (Qg) (Max) @ Vgs :
- 233nC @ 10V
- JEDEC-95 Code :
- TO-220AB
- Series :
- STripFET™ II
- Power Dissipation-Max :
- 45W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 68 ns
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Current - Continuous Drain (Id) @ 25°C :
- 41A Tc
- JESD-609 Code :
- e3
- Rise Time :
- 90ns
- Base Part Number :
- STF12
- Power Dissipation :
- 45W
- Number of Elements :
- 1
- Voltage :
- 100V
- Current :
- 41A
- Resistance :
- 10.5mOhm
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 132 ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 10.5m Ω @ 60A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 550 mJ
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- Pin Count :
- 3
- Turn On Delay Time :
- 25 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 41A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 5200pF @ 25V
- Radiation Hardening :
- No
- Datasheets
- STF120NF10
N-Channel Tube 10.5m Ω @ 60A, 10V ±20V 5200pF @ 25V 233nC @ 10V TO-220-3 Full Pack
STF120NF10 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 550 mJ.A device's maximum input capacitance is 5200pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 41A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 132 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STF120NF10 Features
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 132 ns
STF120NF10 Applications
There are a lot of STMicroelectronics
STF120NF10 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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