STF11NM80

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A Tc

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Resistance :

400mOhm

Height :

9.3mm

REACH SVHC :

No SVHC

Vgs (Max) :

±30V

Lead Free :

Lead Free

Voltage - Rated DC :

800V

Rise Time :

17ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Series :

MDmesh™

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Length :

10.4mm

Turn-Off Delay Time :

46 ns

Threshold Voltage :

4V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

400m Ω @ 5.5A, 10V

Power Dissipation :

35W

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

44A

JESD-609 Code :

e3

Packaging :

Tube

Terminal Finish :

Matte Tin (Sn) - annealed

Fall Time (Typ) :

15 ns

Package / Case :

TO-220-3 Full Pack

Gate Charge (Qg) (Max) @ Vgs :

43.6nC @ 10V

Current Rating :

11A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Mount :

Through Hole

Power Dissipation-Max :

35W Tc

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Number of Pins :

3

Continuous Drain Current (ID) :

11A

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-65°C~150°C TJ

Mounting Type :

Through Hole

Base Part Number :

STF11

Number of Terminations :

3

Turn On Delay Time :

22 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

400 mJ

Additional Feature :

ULTRA-LOW RESISTANCE

Drain to Source Breakdown Voltage :

800V

Width :

4.6mm