STF11NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

16 Weeks

Case Connection :

Isolated

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

455m Ω @ 5.5A, 10V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

650V

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Fall Time (Typ) :

20 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Base Part Number :

STF11

Packaging :

Tube

FET Type :

N-Channel

Transistor Element Material :

SILICON

Series :

MDmesh™ II

Turn-Off Delay Time :

55 ns

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Pins :

3

JESD-609 Code :

e3

Turn On Delay Time :

11 ns

Pin Count :

3

Package / Case :

TO-220-3 Full Pack

Power Dissipation :

30W

Mount :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

Rise Time :

13ns

Element Configuration :

Single

Continuous Drain Current (ID) :

12A

Pulsed Drain Current-Max (IDM) :

48A

Power Dissipation-Max :

25W Tc

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

380mOhm